An interface formulation for the Poisson equation in the presence of a semiconducting single-layer material - EDP
Article Dans Une Revue ESAIM: Mathematical Modelling and Numerical Analysis Année : 2024

An interface formulation for the Poisson equation in the presence of a semiconducting single-layer material

Résumé

In this paper, we consider a semiconducting device with an active zone made of a single-layer material. The associated Poisson equation for the electrostatic potential (to be solved in order to perform self-consistent computations) is characterized by a surface particle density and an out-of-plane dielectric permittivity in the region surrounding the single-layer. To avoid mesh refinements in such a region, we propose an interface problem based on the natural domain decomposition suggested by the physical device. Two different interface continuity conditions are discussed. Then, we write the corresponding variational formulations adapting the so called three-fields formulation for domain decomposition and we approximate them using a proper finite element method. Finally, numerical experiments are performed to illustrate some specific features of this interface approach.
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Dates et versions

hal-03956793 , version 1 (30-01-2023)
hal-03956793 , version 2 (10-09-2024)

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  • HAL Id : hal-03956793 , version 2

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Clément Jourdana, Paola Pietra. An interface formulation for the Poisson equation in the presence of a semiconducting single-layer material. ESAIM: Mathematical Modelling and Numerical Analysis, 2024, 58 (3), pp.833-856. ⟨hal-03956793v2⟩
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